Intel to descide in 2014 where to build its 10/11 Nanometer Fab

26 January, 2014

Three countries compete to host the new Intel fab: Israel, Ireland and the US. This multi-billion project will produce many jobs and will boost the local economy.

Three countries compete to host the new Intel fab: Israel, Ireland and the US. This multi-billion project will produce many jobs and will boost the local economy.

Maxin Fasberg, CEO of Intel Israel
Maxin Fasberg, CEO of Intel Israel

One of the hottest issues in Intel Corp. today is the next leapfrog in semiconductor’s production technology. Intel has decided  to build a new production line for chips with 10/11 nano meter gate size transistors. Intel Israel CEO, Maxin Fassberg revealed today during  press conference in Tel-aviv, that the decision will take place during 2014. “I do not know where Intel will build the new fab, but it will make its decision this year,” she said.

Three countries compete to host the new fab: Israel, Ireland and the US. This multi-billion project will produce many jobs and will boost the local economy. The Israeli executive have already received government incentives for the project. They also won lately an extra space of clean room facilities of about 10,000 square meters, when Intel took hold of the former Micron’s flash memory fab in Kiriat-gat, in the south of Israel, in December 2013.

The original yeild bet between Fasberg and Barret
The original yield bet between Fassberg and Barret

Today, Intel Israel operates one of the most advanced production line in Intel: Its fab-28 produce semiconductor chips in 22 nano meter process. The Israelis also are expected to re-tell their excellent track record. Inside the company everybody knows about about the bet made between Mrs. Fassberg and the former Intel CEO, Crage Barret.

Fassberg said it is possible to produce a wafer full of chips with 100% success rate. Barret said it is impossible. It was unusual bet: Crage Barret promised to make a $1 million party if he loses. Maxin Fassberd promised to serve meals for Intel employees and to sing a song on a video post in Youtube.

During 2008, Intel fab-28 in Kiryat-gat had produced two 300 mm silicon wafer with 100% yield- for the first time in the semiconductors industry. But there was no $1 million party – shortly before the success, Barret stepped down from the position of Intel CEO.

Share via Whatsapp

Posted in: News , Semiconductors , Technology